03N60S5 Datasheet | Specifications & PDF Download

SPN03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low ef

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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isc N-Channel MOSFET Transistor SPP03N60S5，ISPP03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.4Ω ·Enhancement mode ·Fast Switching

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

(4 views)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

(4 views)