| Part Number | Description | Manufacture |
|---|---|---|
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P-Channel MOSFET |
 UNIKC |
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Schottky Barrier Diode |
 Kyocera |
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Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor nt1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -1 |
 Niko |
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Schottky Barrier Diode |
Kyocera |
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Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, |
Niko |
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SBD * TO-252AA Case, Surface Mount Device * Dual Diodes Cathode Common * Extremely Low Forward Voltage drop * Low Power Loss * High Surge Capability * Packaged in 16mm Tape and Reel OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.30g Rating Symb |
 Nihon Inter Electronics |
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Schottky Barrier Diode * TO-251AA Case * Dual Diodes Cathode Common * Extremely Low Forward Voltage drop * Low Power Loss,High Efficiency * High Surge Capability Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Su |
Nihon Inter Electronics |
