072N10N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI072N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.2mΩ ·Enhancement mode ·F

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IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

(9 views)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP072N10N3，IIPP072N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.2mΩ ·Enhanc

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IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

(6 views)

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

(6 views)

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

(5 views)

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

(5 views)

() CRSM072N10N2 SkyMOS2 N-MOSFET 100V, 6mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excelle

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