1.55 Datasheet | Specifications & PDF Download

• ZENER DIODES •LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED BZV55 C2V4 thru BZV55 C75 MAXIMUM RATINGS Ope

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LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

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NJM4558 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM4558 is a dual high-gain operational amplifier with internal compensation circuit an

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XR-1458/4558 Dual Operational Amplifier GENERAL DESCRIPTION The XR-1458/4558 is a pair of independent internally compensated operational amplifiers

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F4558 F4558 、 F4558 F1458 ，。 · · · （） DIP、CSOP TO-8 、 （1/2） 132#（741000） 0938-8285884（T）8224113（F） 1 32（741000） 0938-8285884（T）8

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IP5513 TWS Bluetooth Earphone Charging Box SOC integrated with MCU 1. Features  Flexible and low-cost customized program  Package: SOP16  Disch

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NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared to

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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770 series Ø45 mm 21-114 W MODEL NO. DESIGNATIONS MOTOR DATA Part name Diameter (mm) Lenth (mm) Nominal voltage (V) Nominal speed (rpm) Nominal torq

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community NA555, NE555, SA555, SE555 SLFS022I – SEPTEMBER 1973 – REVIS

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MC4558 Wide bandwidth dual bipolar operational amplifier Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between

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AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

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UTC4558 DUAL OPERATIONAL AMPLIFIER DESCRIPTION The UTC4558 is a monolithic integrated circuit designed for dual operational amplifier. LI NEAR I NTEG

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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2.STR-W6553A Pin function: No STR-W6500 STR-X6500 [T0220F-6L] [T03PF-7L] 1 D 2 - S 3 S/GND GND 4 Vcc 5 SS/ADJ 6 FB 7 BD Name Fun

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TDA8172 TV VERTICAL DEFLECTION OUTPUT CIRCUIT FEATURES s Power Amplifier s Flyback Generator s Thermal Protection DESCRIPTION The TDA8172 is a monoli

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NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared

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Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

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