10016 Datasheet | Specifications & PDF Download

ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 222Ａ RMS 1600 Ｖolts ■ OUTLINE DRAWING PAT10016 PAH10016 Dimension:［mm］ ■ Ｍaximum Ratings Parameter くりしピークオフ Repetitive Peak Of

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 www.

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THYRISTOR MODULE 100A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recog

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 100Ａ Ａvg 1600 Ｖolts ■ OUTLINE DRAWING PDT10016 PDH10016 PCH10016 Dimension:［mm］ ■ Ｍaximum Ratings Parameter くりしピークオフ Repetitiv

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 222Ａ RMS 1600 Ｖolts ■ OUTLINE DRAWING PAT10016 PAH10016 Dimension:［mm］ ■ Ｍaximum Ratings Parameter くりしピークオフ Repetitive Peak Of

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www.DataSheet4U.net DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized,

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10015/D SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter

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THYRISTOR MODULE 100A / 1200 to 1600V PDT10012 PDH10012 PDT10016 PDH10016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascade

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THYRISTOR MODULE 100A / 1200 to 1600V PCH10012 PCH10016 FEATURES * Isolated Base * Thyristor and Diode Cathode Common * High Surge Capability * UL

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 www.

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THYRISTOR MODULE 100A / 1200 to 1600V PDT10012 PDH10012 PDT10016 PDH10016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascade

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THYRISTOR MODULE 100A / 1200 to 1600V PCH10012 PCH10016 FEATURES * Isolated Base * Thyristor and Diode Cathode Common * High Surge Capability * UL

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MJ10015 & MJ10016 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode TO−3 Type Package Description: The MJ10015 and MJ10016 are Darlington transistors

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10016 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic

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MG061D100160A Bridge Diodes 1600V, 100A Feature ・High current capacity ・Thin PKG 17mm ・High heat dissipation ・Halogen free ・Pb free terminal ・RoHS:Yes

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MJ10015-MJ10016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Availabl

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OLED SPECIFICATION Model No: WEG010016ARPP5N00000 SPECIFICATION Version: A CUSTOMER : MODULE NO. : WEG010016ARPP5N00000 APPROVED BY: ( FOR CUSTOME

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OLED SPECIFICATION Model No: WEG010016ALPP5N00000 -1- Free Datasheet http://www.datasheet4u.com/ 5 6 6 7 7 8 9 11 24 28 29 32 51 52 54 60 -2-

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