10A05 SERIES SILICON RECTIFIER VOLTAGE 50~1000 Vol.
10A10 - 10A HIGH CURRENT STANDARD DIODE
® WON-TOP ELECTRONICS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capabi.FCH10A15 - Dual Common Cathode Schottky Barrier Rectifier
FCH10A045 thru FCH10A20 ® Pb FCH10A045/FCH10A06/FCH10A10/FCH10A15/FCH10A20 Pb Free Plating Product 10.0 Ampere Insulated Dual Common Cathode Schottk.FCH10A15 - Schottky Barrier Diode
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10A Avg. 100 Volts SBD FCH10A10 0˚ θ 180˚ CONDUCTION ANGLE FORWARD CURRENT VS. VOLTAGE 20 FCH10A10 (per Arm) AVERAGE FORWARD POWER DISSIPATIO.10A10 - AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
$$ 9ROWDJH5DQJHWR9 FoUZDUG&XUUHQW$PSHUH AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER FEATURES ▪ /RZFRVWFR.FCH10A10 - Dual Common Cathode Schottky Barrier Rectifier
FCH10A045 thru FCH10A20 ® Pb FCH10A045/FCH10A06/FCH10A10/FCH10A15/FCH10A20 Pb Free Plating Product 10.0 Ampere Insulated Dual Common Cathode Schottk.WP710A10SEC-J3 - Solid State Lamp
WP710A10SEC/J3 T-1 (3mm) Solid State Lamp DESCRIPTIONS z The Hyper Red device is based on light emitting diode chip made from AlGaInP z Electrostatic .WP710A10GT - Solid State Lamp
WP710A10GT T-1 (3mm) Solid State Lamp DESCRIPTION The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode FEATURES L.ZXMP10A17GQ - P-Channel MOSFET
ZXMP10A17GQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V RDS(ON) max 350mΩ @ VGS = -10V 450mΩ @ VGS = -6V ID TA = +25°C -2.4.FRH10A15 - 10.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers
FRH10A045 thru FRH10A20 ® FRH10A045/FRH10A06/FRH10A10/FRH10A15/FRH10A20 Pb Pb Free Plating Product 10.0 Ampere Insulated Dual Common Anode Schott.10A10 - Silicon Rectifier
Naina Semiconductor Ltd. Silicon Rectifier, 10.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & lo.GSH10A10B - SBD
S B D T y p e : GSH10A10B FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 .FCH10A15 - SBD
S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta.T110A103J100AS - TANTALUM HERMETICALLY SEALED / AXIAL
TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable .T110A124K075AS - TANTALUM HERMETICALLY SEALED / AXIAL
TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable .T110A184J050AS - TANTALUM HERMETICALLY SEALED / AXIAL
TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable .T110A103J050AS - TANTALUM HERMETICALLY SEALED / AXIAL
TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable .MAC210A10 - Triacs Silicon Bidirectional Thyristors
www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as lig.ZXMP10A17E6 - P-Channel MOSFET
ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -100V: RDS(ON) = 0.350 ; ID = -1.4A DESCRIPTION This new generation of Trench .MAC210A10FP - Triacs
MAC210A8FP, MAC210A10FP Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, moto.