11N80C3 Datasheet | Specifications & PDF Download

SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhanceme

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www.DataSheet4U.com Final data SPP11N80C3 SPA11N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOS™ Power Transistor Feature • New revolutionary high voltag

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconduc

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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