13003 Datasheet | Specifications & PDF Download

ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13003A IC VCEO PC(TO-92) PC(TO-126/ TO-126F) PC(TO-220) MAIN CHARACTERISTICS 1.5A 450V

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DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector

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MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fa

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N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H13003 ¨€ ¨€ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed

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www.DataSheet4U.com ISSUED DATE :2005/01/12 REVISED DATE : GE13003 Description NPN SILICON POWER TRANSISTOR The GE13003 is designed for high voltag

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ÉîÛÚÊÐÁú¾§Î¢µç×ÓÏÞ¹«Ë TO-126 Plastic-Encapsulate Transistors ALJ13003 MAXI VCBO VCEO VEBO IC PC Tj Tstg TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25℃ unle

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003D Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、E

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LM13003C NPN/NPN High Voltage Switching Transistor ●：■■■■ROHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT

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www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collecto

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DXT13003EK 460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector

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NPN SILICON TRANSISTOR H13003D ST13003D █ █ 。、。 █ （Ta=25℃） Tstg——………………………………… -55~150℃ Tj——…………………………………………… 150℃ PC——（Tc=25℃）………………………… 4

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for h

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-XS NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power s

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SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided in

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Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100

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