140 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ Issued Date: Feb. 21, 2005 Model No.: N140A1 - L01 Approval - CONTENTS REVISION HIS

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http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (T

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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www.DataSheet4U.com ABOV SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C1808B/16B HMS81C1708B/16B HMS81C1608B/16B HMS81C1508B/16B HMS81C1404

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Fi

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Product Specification AU OPTRONICS CORPORATION ( ) Preliminary Specifications ( V ) Final Specifications Module Model Name Note ( ) 14.0” FHD 16:9

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KYSAN SKU Number 1112089 1112014 1112013 1111107 1111136 1112319 1111142 1111140 1111141 1111142 1112001 16071 1112003 1111146 1112092 1112076 1111126

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KYSAN SKU Number 1112089 1112014 1112013 1111107 1111136 1112319 1111142 1111140 1111141 1111142 1112001 16071 1112003 1111146 1112092 1112076 1111126

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS1401ATH 100V/2

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PRODUCT SPECIFICATION Doc. Number: □ Tentative Specification □ Preliminary Specification ▓ Approval Specification MODEL NO.: N140BGE SUFFIX: E43 Cust

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Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BEG REPR

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Preliminary TO DATE : General : Feb, 13, 2009 SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. :: LTN140AT02-C LTN140AT02-C NOTE : - Extension

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High D

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SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Comp

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