150U/150UR SILICON POWER DIODE DO - 8 FEATURES β.
Fuji Electric
6MBI150U-170 - IGBT
6MBI150U-170 IGBT Module U-Series 1700V / 150A 6 in one-package Features Applications Β· High speed switching Β· Inverter for Motor drive Β· Uninte.
IXYS
DSA10C150UC - Schottky Diode
Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA10C150UC Marking on Product: SAKAUC 1 2/4 3.
Compensated Deuices Incorporated
1N4150UR-1 - SWITCHING DIODE
β’ 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 β’ SWITCHING DIODE β’ HERMETICALLY SEALED β’ METALLURGICALLY BONDED β’ DOUBLE PLUG .
Fairchild Semiconductor
FMG1G150US60H - IGBT
FMG1G150US60H FMG1G150US60H Molding Type Module IGBT General Description Fairchild IGBT Power Module provides low conduction and switching losses a.
Fairchild Semiconductor
FM2G150US60 - Molding Type Module
FM2G150US60 IGBT FM2G150US60 Molding Type Module General Description Fairchildβs Insulated Gate Bipolar Transistor (IGBT) power modules provide low c.
MagnaChip
MPKC2CA150U40 - 400V FRD Module
MPKC2SA/CA150U40 400V FRD Module MPKC2SA/CA150U40 400V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and EM.
Microsemi
1N4150UR-1 - SWITCHING DIODE
1N4150UR-1 FEATURES β’ 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 β’ SWITCHING DIODE β’ METALLURGICALLY BONDED β’ HERMETICALLY.
BOE
HV150UX1-101 - TFT LCD
www.DataSheet4U.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMIS.
Fuji Electric
6MBI150U2B-060 - IGBT MODULE
6MBI150U2B-060 IGBT MODULE (U series) 600V / 150A IGBT Modules Features Β· Low VCE(sat) Β· Compact Package www.DataSheet4U.com Β· P.C. Board Mount Mod.
Fuji Electric
6MBI150U4B-120 - IGBT MODULE
SPECIFICATION www.DataSheet4U.com Device Name Type Name Spec. No. : : : IGBT MODULE 6MBI150U4B-120 MS5F 6013 Jan. 18 β05 Jan. 18 β05 S.Miyashita.
NAINA SEMICONDUCTOR
150U120 - SILICON POWER DIODE
150U/150UR SILICON POWER DIODE DO - 8 FEATURES β’ Diffused Series β’ Available in Normal & Reverse Polarity β’ Industrial Grade β’ Available In Avalanche .
NAINA SEMICONDUCTOR
150U160 - SILICON POWER DIODE
150U/150UR SILICON POWER DIODE DO - 8 FEATURES β’ Diffused Series β’ Available in Normal & Reverse Polarity β’ Industrial Grade β’ Available In Avalanche .
NAINA SEMICONDUCTOR
150UR20 - SILICON POWER DIODE
150U/150UR SILICON POWER DIODE DO - 8 FEATURES β’ Diffused Series β’ Available in Normal & Reverse Polarity β’ Industrial Grade β’ Available In Avalanche .
Pioneer
MVH-150UI - RDS MEDIA CENTER RECEIVER SERVICE MANUAL
CRT5065 MVH-350BT/XMEW5 ORDER NO. RDS MEDIA CENTER RECEIVER MVH-350BT MVH-355BT /XMES MVH-150UI /XMEW 5 MVH-155UI /XMES MVH-155UI /XMES1 MVH-159UI .
BOE
HV150UX1-100 - TFT LCD
PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE TFT-LCD SBU AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE TFT.
IDTech
N150U3-L06 - UXGA Color TFT/LCD Module
Engineering Specification Engineering Specification Type 15.0 UXGA Color TFT/LCD Module Model Name: N150U3-L06 Document Control Number: OEM I-N150U3.
HYDIS
HV150UX2-100 - TFT LCD
Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED.
OPTEK Technologies
OHN3150U - Ratiometric Linear Hall-effect Sensor
Ratiometric Linear Hall-effect Sensor OHN3150U, OHN3151U, OHS3150U, OHS3151U Features: β’ Ratiometric linear output capable of sinking and sourcing cu.
Fuji
2MBI150U4A-120 - IGBT MODULE
SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI150U4A-120 Spec. No. : MS5F 6031 Feb. 09 β05 Feb. 09 β05 S.Miyashita T.Miyasaka K.Yamad.
Fuji
2MBI150U4B-120 - IGBT MODULE
SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI150U4B-120 Spec. No. : MS5F 6059 Mar. 09 β05 S.Miyashita Mar. 09 β05 T.Miyasaka K.Yamada.