16M-Bit Datasheet | Specifications & PDF Download

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LG Semicon Co.,Ltd. GM71V64403A GM71VS64403AL 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71V(S)64403A/AL is the new generation dyna

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM co

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HANBit HDD16M64D8W DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, Part No. HDD16M64D8W GENERAL DESCRIPTION The HANBiT H

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W25Q16DW 1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: September 1, 2014 -1- Revision J W25Q16DW Table of C

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DATA SHEET µPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO MOS INTEGRATED CIRCUIT Description The µPD42S17405, 4217405 are 4,194,3

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DATA SHEET µPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO MOS INTEGRATED CIRCUIT Description The µPD42S17405L,

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W25Q16CV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI Publication Release Date: May 22, 2014 -1- Revision H W25Q16CV Table of Contents 1.

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TH25Q-16HB Datasheet page1 of 57 TH25Q-16HB Ultra Low Power, 16M-bit Serial Multi I/O Flash Memory Datasheet Feb. 1, 2021 Performance Highlight  Wi

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IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

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KM29U128T, KM29U128IT Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Chan

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HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin U

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3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168 pin unbuffered DIMM Modules HYS 64/72V8200GU HYS 64/72V16220GU

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CYK128K16MCCB 2-Mbit (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 55 ns, 70 ns • Ultra-low active power —

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SPI NOR PN25F16 PN25F16 16M-BIT SERIAL FLASH MEMORY Datasheet Sep. 2015 NOTE: INFORMATION IN THIS PRODUCT SPECIFICATION IS SUBJECT TO CHANGE AT ANY

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DATA SHEET µPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO MOS INTEGRATED CIRCUIT Description The µPD42S17405, 4217405 are 4,194,3

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