1N65A Datasheet | Specifications & PDF Download

CET01N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for

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MSJPF11N65A Features • Very Low FOM RDS(on)×Q g • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finis

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www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for ext

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Silicon N-Channel Power MOSFET CS1N65 A1 ○R General Description： VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is ob

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O

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GENERAL DESCRIPTION GPT01N65A POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhance

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Silicon N-Channel Power MOSFET CS1N65 A3 ○R General Description： CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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UNISONIC TECHNOLOGIES CO., LTD 1N65A 0.5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have bet

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