www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 V.
EIC
1S1885 - SILICON RECTIFIER DIODES
www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High rel.
Toshiba Semiconductor
1S1885 - Silicon Rectifier
1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830,1S1885,1S1887,1S1888 General Purpose Rectifier Applications Unit: mm · A.
Toshiba Semiconductor
1S1885A - Silicon Rectifier
1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon Diffused Type 1S1885A,1S1887A,1S1888A General Purpose Rectifier Applications · Average Forward Cur.