1S6 Datasheet | Specifications & PDF Download

1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and

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1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and

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W561XXX Data Sheet 4-TRACK PCM-MELODY WITH VOICE SYNTHESIZER (BandDirectorTM Series) Table of Contents1. 2. 3. 4. 5. GENERAL DESCRIPTION

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S65L & AOB11S65L & AOTF11S

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YG961S6R (Ip 8A) Super LLD (For PFC circut) LOW LOSS SUPER HIGH SPEED RECTIFIER ( Ip 8A / 600V ) Outline drawings, mm 12 Features Insulated package

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Pulse I/F (DC power input) The 5-Phase Stepping Driver PMDPB1S6P01 DC24V Full-step/Half-step (500 x 1 divisions) (500 x 2 divisions) Applicable moto

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Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM hig

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AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the adv

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isc N-Channel MOSFET Transistor AOTF11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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YG971S6R (Io 8A / 600V) [200510] Super LLD II (For PFC circut) (current discontinuous mode) Outline drawings, mm TO-220F LOW LOSS SUPER HIGH SPEED

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204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die HMT425S6AFR6C HMT451S6AFR6C HMT451S6AFR8C HMT41GS6AFR8C *SK hynix reserves

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

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AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S65L & AOB11S65L & AOTF11S

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AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S65L & AOB11S65L & AOTF11S

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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IS61S6432 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock

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