1S6 Datasheet | Specifications & PDF Download

AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM hig

Rating: 1 ★ (9 votes)

AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM hig

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor AOB11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

Rating: 1 ★ (7 votes)

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

Rating: 1 ★ (6 votes)

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the

Rating: 1 ★ (6 votes)

AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S65L & AOB11S65L & AOTF11S

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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www.DataSheet4U.com K1S64161CC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0

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www.DataSheet4U.com K1S6416BCC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0

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Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap

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204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb A-die HMT425S6AFR6A HMT451S6AFR6A HMT451S6AFR8A HMT41GS6AFR8A *SK hynix reserv

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

Rating: 1 ★ (5 votes)

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

Rating: 1 ★ (5 votes)

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using

Rating: 1 ★ (5 votes)