1S6 Datasheet | Specifications & PDF Download

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int

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Absorptive SPST PIN Diode Switch Operating From 1 GHz to 2 GHz Up to +20 dBm and Field Replaceable SMA PIN Diode Switches Technical Data Sheet PE71S

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SP6T Electromechanical Relay Switch DC to 26.5 GHz, SMA, 250 Watts, 28V Control TECHNICAL DATA SHEET PE71S6087 The PE71S6087 is a SINGLE POLE SIX T

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CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) www.DataSheet4U.com Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.0

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Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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M1S Series 5.0 Volt HCMOS/TTL CompatibleOscillators M1S Series 5.0 Volt HCMOS/TTL Compatible Ceramic Package Surface Mount Oscillators Features groun

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Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap

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AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig

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isc N-Channel MOSFET Transistor AOW11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community ADC161S626 SNAS468D – SEPTEMBER 2008 – REVISED DECEMBER 2014

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Pag

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AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/6 HBN3101S6R (Dua

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Pulse I/F (AC power input) The 5-Phase Stepping Driver PMAPA1S6A01 AC200V/230V Micro-Step (500 x 1 to 40 divisions) Applicable motor ø86 ø106 Charact

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Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap

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