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No Part Number Description Manufacture PDF
13 1SS193 SILICON EPITAXIAL PLANAR DIODE

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application 1SS193 Unit: mm  Small package : SC-59  Low forward voltage : VF (3) = 0.9V (typ.)  Fast revers
Toshiba Semiconductor
Toshiba Semiconductor
1SS193 pdf
12 1SS193 SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: F3 F3 F3 SOT-23 1
JCET
JCET
1SS193 pdf
11 1SS193 Surface mount switching diode

Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF(3)=0.9V(typ). Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:
GME
GME
1SS193 pdf
10 1SS193 150mW Switching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS193 Features • Low Leakage Current • Su
MCC
MCC
1SS193 pdf
9 1SS193 SURFACE MOUNT FAST SWITCHING DIODE

SURFACE MOUNT FAST SWITCHING DIODE 1SS193 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purpose switching applications MECHANICAL DATA
LITE-ON
LITE-ON
1SS193 pdf
8 1SS193 SURFACE MOUNT FAST SWITCHING DIODE

® WON-TOP ELECTRONICS 1SS193 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General
WON-TOP
WON-TOP
1SS193 pdf
7 1SS193 DIODE

RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junc
WEJ
WEJ
1SS193 pdf
6 1SS193 Surface Mount Switching Diodes

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Appl
WEITRON
WEITRON
1SS193 pdf
5 1SS193 Switching Diodes

1. ANODE 2. N.C. 3. CATHODE Features — Low forward voltage : VF(3)=0.9V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak
LGE
LGE
1SS193 pdf
4 1SS193 SWITCHING DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and
RECTRON
RECTRON
1SS193 pdf
3 1SS193 ULTRA HIGH SPEED SWITCHING DIODE

SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS193 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance
Kexin
Kexin
1SS193 pdf
2 1SS193 Surface mount switching diode

BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage Pb VF(3)=0.9V(typ). z Fast switching. Lead-free z Fast reverse recovery time:trr=1.6n
Galaxy Semi-Conductor
Galaxy Semi-Conductor
1SS193 pdf


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