Toshiba
1SS420CT - Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.6±0.05
1S
(11 views)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier T.
Toshiba
1SS420CT Distributor
