1Z12 Datasheet | Specifications & PDF Download

1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSOR

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Freescale Semiconductor, Inc. Data Sheet: Technical Data Document Number: MKW01Z128 Rev. 6, 04/2016 MKW01Z128 MKW01Z128 Highly-integrated, cost-effe

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NXP Semiconductors Data Sheet: Technical Data KV11P64M75 Rev. 6, 10/2020 Kinetis V Series KV10 and KV11, 128/64 KB Flash 75 MHz Cortex-M0+ Based Mic

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NXP Semiconductors Data Sheet: Technical Data KV11P64M75 Rev. 6, 10/2020 Kinetis V Series KV10 and KV11, 128/64 KB Flash 75 MHz Cortex-M0+ Based Mic

Rating: 1 ★ (3 votes)

NXP Semiconductors Data Sheet: Technical Data KV11P64M75 Rev. 6, 10/2020 Kinetis V Series KV10 and KV11, 128/64 KB Flash 75 MHz Cortex-M0+ Based Mic

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Naina Semiconductor Ltd. 300W Zener Type Power Surge Suppressor Features • Glass passivated junction • Zener type suppressor • Superior clamping abili

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Naina Semiconductor Ltd. 300W Zener Type Power Surge Suppressor Features • Glass passivated junction • Zener type suppressor • Superior clamping abili

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www.eicsemi.com MM1Z2V4 - MM1Z75 VZ : 2.4 to 75 V PD : 500 mW FEATURES : * Total Power Dissipation 500 mW * Wide Zener Reverse Voltage Range 2.4 V to

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74AUP1Z125 Low-power X-tal driver with enable and internal resistor; 3-state Rev. 7 — 28 January 2022 Product data sheet 1. General description T

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NXP Semiconductors Data Sheet: Technical Data KV11P64M75 Rev. 6, 10/2020 Kinetis V Series KV10 and KV11, 128/64 KB Flash 75 MHz Cortex-M0+ Based Mic

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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Naina Semiconductor Ltd. 300W Zener Type Power Surge Suppressor Features • Glass passivated junction • Zener type suppressor • Superior clamping abili

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C1Z3.3B THRU C1Z91B SILICON ZENER DIODE 3.3 VOLTS THRU 91 VOLTS 1.0 W, 5% TOLERANCE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICON

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MM1Z2V0B - MM1Z39B VZ : 2.0 to 39 V PD : 500 mW FEATURES : * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted desig

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1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSOR

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RU1Z120R N-Channel Advanced Power MOSFET Features • 150V/120A, RDS (ON) =11mΩ(Typ.)@VGS=10V • Reliable and Rugged • 100% avalanche tested • 175°C Ope

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R SEMICONDUCTOR MM1Z2V0 THRU MM1Z120 0.5W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.500 mW Small plastic package suitable fo

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R SEMICONDUCTOR MM1Z2V0 THRU MM1Z120 0.5W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.500 mW Small plastic package suitable fo

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SMD Type Transistors Zener Diodes MM1Z2V0~MM1Z75 (KM1Z2V0~KM1Z75) ■ Features ● Total power dissipation: max. 500 mW ● Tolerance approximately ± 5%

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SMD Type Transistors Zener Diodes MM1Z2V0~MM1Z75 (KM1Z2V0~KM1Z75) ■ Features ● Total power dissipation: max. 500 mW ● Tolerance approximately ± 5%

Rating: 1 ★ (2 votes)