·
3246 Hits
and Benefits
• Dual Diode Construction − Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
• 45 V Blocking Voltage • Low Forwar...
·
29 Hits
VDS =30V,ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V
High power and current handing capability Lead free product is acqui...
·
24 Hits
emperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W
Data and specifications sub...
·
19 Hits
low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise...
·
19 Hits
l pitch (mm)
Specification 1366(H) X 768(V), WXGA Resolution 409.8(H) X 230.4(V) 18.5 inches diagonal 0.3(H) X 0.3(V)
Remark
or configuration
Over...
·
19 Hits
age 2. Refer to page 4. Refer to page 4.
Basic Models
General-purpose
• A variety of actuators is available for a wide range of application. • The co...
·
18 Hits
age 2. Refer to page 4. Refer to page 4.
Basic Models
General-purpose
• A variety of actuators is available for a wide range of application. • The co...
·
18 Hits
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / no forward recovery
Temperature independent switching be...
·
17 Hits
Order code SCT027H65G3AG
VDS 650 V
RDS(on) typ. 29 mΩ
ID 60 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High spe...
·
14 Hits
THGBM5G5A1JBAIR Interface
THGBM5G5A1JBAIR has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode support. Furthermore follo...
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy