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BSC23-N0121 - Data Travo Flyback
Data Travo Flyback FCM-21A004 Tampak Bawah Skema Koneksi No. Pin 1 2 Fungsi H B+110 Digunakan Pada TV : China 34 5 NC 195 AFC 6 ABL 7 8 9 1.V23086-C1021-A502 - Single Relays
PCB Relays Single Relays Micro Relay K Catalog 1308028 Revision 03-06 Revision 03-05 Description Features - Smallest power relay - Minimal weight (0.TA2123AF - 1.5V Stereo Headphone Amplifier
TA2123AF TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AF 1.5V Stereo Headphone Amplifier The TA2123AF is the system amplifier IC whic.BAS21LT1 - CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred.M236HGJ-L21 - TFT LCD
PRODUCT SPECIFICATION Doc. Number : Tentative Specification Preliminary Specification Approval Specification MODEL NO.: M236HGJ SUFFIX: L21 Custome.SM2123EGL - Dual channel dimmable LED linear constant current controller
JIU XIN ELECTRONICS CO.,LTD SM2123EGL LED QZSTIBV1.2 SM2123EGL a) OUT1、OUT2 , 100mA h b) <± 5% c :120Vac/220Vac PWM e DIM ,OUT .MAX2321 - SiGe Dual-Band LNA/Mixer
19-1535; Rev 1; 6/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs Features o Ultra-.HN62321 - (HN62321 / HN62331) 1M Mask ROM
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .2SK2123 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .23LM-C213V - hybrid motors
LEAD WIRE UL 1007 AWG 22 11.8 (300) MIN .826 (21) .81 (20.64) .20 (5) 2323LM-C 1.82º H3YLBRMID -C 1.8º HYBRID Unit: inches (mm) .43 (11) .25 + -.R5F21238DFP - MCU
R8C/22 Group, R8C/23 Group RENESAS MCU REJ03B0097-0200 Rev.2.00 Aug 20, 2008 1. Overview This MCU is built using the high-performance silicon gate C.R5F2123AJFP - MCU
R8C/22 Group, R8C/23 Group RENESAS MCU REJ03B0097-0200 Rev.2.00 Aug 20, 2008 1. Overview This MCU is built using the high-performance silicon gate C.UPD4721 - RS-232 LINE DRIVER/RECEIVER AT 3.3 V/5 V
DATA SHEET MOS INTEGRATED CIRCUIT µP D 4 7 2 1 RS-232 LINE DRIVER/RECEIVER AT 3.3 V/5 V The µPD4721 is a high-breakdown voltage silicon gate CMOS .M215HGE-L23 - TFT LCD
PRODUCT SPECIFICATION Doc. Number : Tentative Specification Preliminary Specification Approval Specification MODEL NO.: M215HGE SUFFIX: L23 Custome.F9223L-F219 - M-Power
No t o c e r e m m f d n o e n r e d w n sig . No t o c e r e m m f d n o e n r e d w n sig . 1.Application This specifies M-Power.MSP2321 - P-Channel Enhancement Mode Power MOSFET
MSP2321 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-.ADM213 - 5V Powered CMOS RS-232 Drivers/Receivers
0.1 μF, 5 V Powered CMOS RS-232 Drivers/Receivers ADM206/ADM207/ADM208/ADM211/ADM213 FEATURES 0.1 μF to 10 μF capacitors 120 kB/s data rate Two recei.