21N50C3 Datasheet | Specifications & PDF Download

SPB21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 •

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·Improved tran

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SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 •

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SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 •

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isc N-Channel MOSFET Transistor SPP21N50C3，ISPP21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on)

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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