23W Datasheet | Specifications & PDF Download

SGL8023W LED 1.0 。 SGL8023W LED 1.

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SHENZHENNSIWAYTECHNOLOGY CO.,LTD NS4225 Nov. 2018 V1.0 NS4225 23W D PBTL/BTL 1  ： 10W×2(8Ω / VCC=12V/ THD+N=10%/ BTL ) 23W×2(8Ω / VCC=18V/ TH

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

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www.DataSheet4U.com PulseGuard ® Suppressors Surface Mount Polymeric ESD Suppressors RoHS Pb PGB1 Series Lead-Free SOT23 ESD Suppressor Product O

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DC/DC Converter TVN 5WI Series, 5 Watt • Ultra low ripple and noise 10mVp-p typ. • DIP-24 Package • Regulated • I/O isolation 1600 VDC functional

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Next Previous PulseGuard ® Suppressors Polymeric ESD Suppressors PGB Series SOT23 Surface Mount ESD Suppressor Product Overview PulseGuard ESD Supp

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MITSUMI Regulator IC with the Soft-Start MM192x Series Regulator IC with the Soft-Start Monolithic IC MM192x Series Outline This IC is 1A regulator

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Features ‡ +LJK'HQVH&HOO'HVLJQIRU([WUHPHO\/RZ5'621 ‡ 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK ‡ 6XUIDFH0RXQW3DFNDJH ‡ (SR[\0HHWV8/ 9 )

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DC/DC Converter TDN 3WI Series, 3 Watt • Ultra compact DIP package 13.2 x 9.1 x 10.2 mm • I/O-isolation 1‘600 VDC • Fully regulated outputs • Operat

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BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect T

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Alfa-MOS Technology General Description AFP7423WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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Alfa-MOS Technology AFP2923W 20V P-Channel Enhancement Mode MOSFET General Description AFP2923W, P-Channel enhancement mode MOSFET, uses Advanced Tr

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Product specification KE183W thru KE253W SOD-123 +0.1 2.7-0.1 +0.1 0.55-0.1 Unit: mm +0.05 1.1-0.05 Features Metal silicon junction,majority carrie

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G145PU23W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 3 W • Typical 1450 nm Emission Wavelength • High R

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Specification for OLED AOM12832A0-2.23WW Revision O AO M 12832 A0 2.23 W W / / / / / Orient Display Passive Matrix OLED Monochrome Resolution 128 x

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1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE ST

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitny

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BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description and Applications Th

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BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description and Application Th

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