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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 55ns LOW POWER CONSUMPTION: – Active

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2004/D Advance Information 256KB and 512KB BurstRAM™ Secondary Cache Modules for P

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRA

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M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V

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M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V

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R1LV5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low volt

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R1LV5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low volt

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M27W402 4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 80ns at VCC = 3.0V to 3.

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M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS F

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M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are repl

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www.DataSheet.co.kr Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM  Organized as 32,768 x

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R1LP5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0070EJ0100 Rev.1.00 2011.04.13 Description The R1LP5256E Series is a family of low volt

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R1LP5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0070EJ0100 Rev.1.00 2011.04.13 Description The R1LP5256E Series is a family of low volt

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R1LP5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0070EJ0100 Rev.1.00 2011.04.13 Description The R1LP5256E Series is a family of low volt

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M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption:

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M29F002T, M29F002NT M29F002B 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS F

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