NM27C010 1,048,576-Bit (128K x 8) High Performance.
27C010 - 1 Megabit 128K x 8 OTP CMOS EPROM
AT27C010/L Features • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01.FM27C010 - High Performance CMOS EPROM
FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM .. January 2000 FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM .D27C010 - 1M CHMOS EPROM
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .27C010 - 1M (128K x 8) CHMOS EPROM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.AT27C010 - 1 Megabit 128K x 8 OTP CMOS EPROM
Features • Fast read access time – 45ns • Low-power CMOS operation – 100µA max standby – 25mA max active at 5MHz • JEDEC standard packages – 32-lead P.AM27C010 - 1 Megabit (128 K x 8-Bit) CMOS EPROM
FINAL Am27C010 1 Megabit (128 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 45 ns s Low power consu.W27C010 - 128K x 8 ELECTRICALLY ERASABLE EPROM
W27C010 128K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read .27C010 - 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Des.EN27C010 - 1Megabit EPROM
www.DataSheet4U.com EN27C010 EN27C010 1Megabit EPROM (128K x 8) FEATURES • Fast Read Access Time : -45, -55, -70, and -90ns • Single 5V Power Supply.AS27C010A - 1 MEG UVEPROM UV Erasable Programmable Read-Only Memory
UVEPROM Austin Semiconductor, Inc. 1 MEG UVEPROM UV Erasable Programmable Read-Only Memory AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89614 • MIL.TMS27C010A - Programmable ROM
TMS27C010A 131 072 BY 8ĆBIT UV ERASABLE TMS27PC010A 131 072 BY 8ĆBIT PROGRAMMABLE READĆONLY MEMORIES SMLS110C − NOVEMBER 1990 − REVISED SEPTEMBER 1997.HT27C010 - OTP CMOS 128Kx 8-Bit EPROM
HT27C010 CMOS 128K´8-Bit OTP EPROM Features · Operating voltage: +5.0V · Programming voltage - VPP=12.5V±0.2V - VCC=6.0V±0.2V · 128K´8-bit organizatio.NM27C010 - 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Des.SMJ27C010A - 1 MEG UVEPROM UV Erasable Programmable Read-Only Memory
UVEPROM Austin Semiconductor, Inc. 1 MEG UVEPROM UV Erasable Programmable Read-Only Memory AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89614 • MIL.TD27C010 - 1M (128K x 8) CHMOS EPROM
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WS27C010L Military 128K x 8 CMOS EPROM • High Performance CMOS — 90 ns Access Time • Fast Programming • EPI Processing — Latch-Up Immunity to 200 mA.