2A06 Datasheet | Specifications & PDF Download

2A01 thru 2A07 ® Pb Pb Free Plating Product 2A01 thru 2A07 2.0 Ampere DO-15 Package General Purpose Rectifiers DO-15 Features • Diffused junction

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YENYO Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 12.0 Ampere ITO-220AC .108(2.75) .098(2.50) .185(4.70) .175(4.44) MA

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CREAT BY ART FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directi

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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2A01G thru 2A07G CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High current capabili

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2A01 - 2A07 2.0A RECTIFIER Features · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 70A Peak P

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2A01G - 2A07G 2.0A GLASS PASSIVATED RECTIFIER Features · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low F

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YENYO Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 12.0 Ampere TO-220AC .154(3.91) DIA .137(3.50) .057(1.45) .052(1.33)

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6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17

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7MBR30U2A060 IGBT MODULE (U series) 600V / 30A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Di

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7MBR50U2A060 IGBT MODULE (U series) 600V / 50A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Di

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6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17

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SiC02A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8R2A06PL，ITK8R2A06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V)

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EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK8R2A06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers

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IC (mm) SD TransFlash™ Card miniSD™ RS-MMC™ Memory Stick Duo™ Memory Stick™ 62 40 (mm) H 16 (ISO+ CP8) (pcs.) (F) W D 8 (ISO) SCCA2A

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フォトインタラプタ PHOTOINTERRUPTER SG2A06 SG2A06はダイオードと、フォトトランジスタをわせたフォト インタラプタです。にしたインタラプタです。 SG2A06 is a transmission type photointerrupter combined high

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Document 110-1 5mmTunableInductor–164, 165 Series TRITUNER 3 TOOLS IN 1 SEE INDEX TUNING WRENCH Unshielded Styles 0.139 ±0.005 3,53 ±0,13 • These

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Document 110-1 5mmTunableInductor–164, 165 Series TRITUNER 3 TOOLS IN 1 SEE INDEX TUNING WRENCH Unshielded Styles 0.139 ±0.005 3,53 ±0,13 • These

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