2Gb Datasheet | Specifications & PDF Download

PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB DDR2 SDRAM SO-DIMM EBE21UE8ABDA (256M words × 64 bits, 2 Ranks) Specifications • Density: 2GB • Organ

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Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4 M

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MAX9275/MAX9279 EVALUATION KIT AVAILABLE 3.12Gbps GMSL Serializers for Coax or STP Output Drive and Parallel Input General Description The MAX9275/M

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RS2ABF~RS2MBF Rev.C Feb.-2015 DATA SHEET / Descriptions ，：50V~1000V，：2.0A， SMBF 。 Surface Mount Superfast Recovery Rectifier,Reverse Voltage：50 to

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Jingdao Microelectronics Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 2 A FEATURES • For surface mounted a

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RS2ABF THRU RS2MBF Surface Mount Fast Recovery Rectifier Reverse Voltage - 50 to 1000 V Forward Current - 2 A Features • Glass Passivated Chip Juntio

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FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat

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DATA SHEET www.DataSheet4U.com 2GB Registered DDR2 SDRAM DIMM EBE21RD4AEFA-6 (256M words × 72 bits, 2 Ranks) Description The EBE21RD4AEFA is a 256M

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PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ABFA (256M words × 64 bits, 2 Ranks) Specifications • Density: 2GB

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SY89297U 2.5/3.3V, 3.2Gbps Precision CML Dual-Channel Programmable Delay General Description The SY89297U is a DC-3.2Gbps programmable, twochannel de

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RS2ABF thru RS2MABF Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A FEATURES * Plastic packa

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VMIACC-5595 2Gb/s Reflective Memory Hub Assembly Installation Guide 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (256) 880-0444 w

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2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83FFR-xxC H5TQ2G63FFR-xxC H5TQ2G83FFR-xxI H5TQ2G63FFR-xxI H5TQ2G83FFR-xxJ

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SAMSUNG CONFIDENTIAL Rev. 1.1, Sep. 2012 K9GBG08U0B K9LCG08U0B K9HDG08UXB 32Gb B-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRO

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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT18HTF6472 – 512MB MT18HTF12872(P) – 1GB MT18HTF

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IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V

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2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)  VDD =

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IS43/46TR16128C, IS43/46TR16128CL, IS43/46TR82560C, IS43/46TR82560CL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V

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IS43/46TR16128C, IS43/46TR16128CL, IS43/46TR82560C, IS43/46TR82560CL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V

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2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G83BFR-xxL H5TQ2G83BFR-xxJ H5TQ2G63BFR-xxC

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