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2MB Datasheet, Features, Application

2MBI1000VXB-170E-50 IGBT

http://www.fujielectric.com/products/semiconductor.

Samsung Electronics
rating-1 36

K5L2731CAM-D770 - 128Mb NOR Flash + 32Mb UtRAM

K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU.
Fuji Electric
rating-1 20

2MBI200U4B-120-50 - IGBT

SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 May. 11 ’06 K.Muramatsu May. 1.
Fuji
rating-1 18

2MBI75N-120 - IGBT(1200V 75A)

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I.
PMC-Sierra
rating-1 17

PM39LV010 - (PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory

PMC FEATURES Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory • Single Power Supply Op.
Maxim
rating-1 16

MAX3675 - 622Mbps / Low-Power / 3.3V Clock-Recovery and Data-Retiming IC

19-1258; Rev 2; 11/98 L MANUA ION KIT T A U L EVA BLE AVAILA 622Mbps, Low-Power, 3.3V Clock-Recovery and Data-Retiming IC with Limiting Amplifier __.
ISSI
rating-1 16

IS61QDPB44M18A1 - 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM

IS61QDPB44M18A/A1/A2 IS61QDPB42M36A/A1/A2 4Mx18, 2Mx36 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.5 Cycle Read Latency) NOVEMBER 2014 FEATURES  2Mx36.
NanoAmp Solutions
rating-1 16

N02M083WL1A - 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M083WL1A www.D.
Fuji
rating-1 16

2MBI600XHA120-50 - IGBT

2MBI600XHA120-50 Power Module (X series) 1200V / 600A / 2-in-1 package ■ Features Low V CE(sat) High speed switching Low Inductance Module structure .
Fuji
rating-1 15

2MBI150SC-120 - IGBT MODULE

2MBI150SC-120 IGBT Module 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applicati.
Samsung
rating-1 15

K4H511638J - 512Mb J-die DDR SDRAM

Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP-(II) with Lead-Free & Halogen-Free (RoHS compliant) dat.
STMicroelectronics
rating-1 14

27C160 - 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

M27C160 16 Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 70ns BYTE-WIDE or WORD-WIDE .
Fuji Electric
rating-1 14

2MBI100U4A-120 - IGBT MODULE

www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI100U4A-120 MS5F 6061 Mar. 09 ’05 Mar. 09 ’05 S.Miyashit.
NanoAmp Solutions
rating-1 14

N02M0818L1A - 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L1A www.D.
NanoAmp Solutions
rating-1 14

N02M0818L2A - 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L2A www.D.
STMicroelectronics
rating-1 14

Z0402MB - 4A Triac

A2 A1 A2 G DPAK Product status link Z0402MB Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 3 mA Tj max. 125 °C Z0402MB Datasheet 4 A - Tria.
Fuji Electric
rating-1 13

2MBI450U4E-120 - IGBT

SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI450U4E-120 Spec. No. : MS5F 6057 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada.
Fuji
rating-1 12

2MBI100N-060 - IGBT MODULE

2MBI100N-060 600V / 100A 2 in one-package IGBT Module Features · High speed switching · Voltage drive · Low inductance module structure Application.
Fuji
rating-1 12

2MBI400N-060 - IGBT(600V /400A)

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I.
FE
rating-1 12

2MBI450UE-120 - IGBT Module U-Series

www.DataSheet4U.com 2MBI450UE-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 450.
GSI Technology
rating-1 12

GS864272B-xxxV - (GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs

www.DataSheet4U.com Preliminary GS864218/36/72(B/C)-xxxV 119- & 209-Pin BGA Commercial Temp Industrial Temp Features 4M x 18, 2M x 36, 1M x 72 72Mb.
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