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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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2MBI800XNE120-50 Power Module (X series) 1200V / 800A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solder pin terminals ■

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K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU

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PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E (64M words × 64 bits, 2 Ranks) Description The EBD52UC8AKFA is 64M words × 64

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www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI100U4A-120 MS5F 6061 Mar. 09 ’05 Mar. 09 ’05 S.Miyashit

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 May. 11 ’06 K.Muramatsu May. 1

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SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI450U4E-120 Spec. No. : MS5F 6057 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada

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DATA SHEET 512MB DDR SDRAM SO-DIMM EBD52UD6ADSA (64M words × 64 bits, 2 Ranks) Description The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double Da

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Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RE

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SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI400U4H-170 Spec. No. : MS5F 6098 Apr. 15 ’05 S.Miyashita Apr. 15 ’05 T.Miyasaka K.Yamada

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2MBI 200P-140 IGBT MODULE ( P-Series ) n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package Features High speed swi

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IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level

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