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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L1A www.D

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L2A www.D

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A2 A1 A2 G DPAK Product status link X0402MB Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 200 µA Tj max. 125 °C X0402MB Datasheet 4 A Sens

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www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI100U4A-120 MS5F 6061 Mar. 09 ’05 Mar. 09 ’05 S.Miyashit

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S28HS512T, S28HS01GT, S28HL512T, S28HL01GT 512Mb/1Gb SEMPER™ Flash S Octal interface, 1.8V/3.0V Features • Infineon 45-nm MIRRORBIT™ technology that s

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M083WL1A www.D

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K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU

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S25FL512S 512 Mbit (64 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Da

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S25FL512S 512 Mb (64 MB) FL-S Flash SPI Multi-I/O, 3.0 V Features • CMOS 3.0 V Core with versatile I/O • SPI with Multi-I/O • Density - 512 Mb (64 MB)

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Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSU

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IS42R86400F/16320F, IS45R86400F/16320F IS42S86400F/16320F, IS45S86400F/16320F 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS S2ABF THRU S2MBF TECHNICAL SPECIFICATIONS OF GENERAL PURPOSE SILICON RECTIFIER VOLTAGE RANGE - 50 t

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www.DataSheet4U.com 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/7

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Rev. 1.0, Jun. 2016 K4T51083QN K4T51163QN 512Mb N-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRON

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IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level

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H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H

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Rev. 1.0, Dec. 2009 K4M51163PI 512Mb I-die Mobile SDR SDRAM 32Mb x16, 54FBGA with Lead-Free & Halogen-Free (VDD / VDDQ = 1.8V / 1.8V) datasheet SAMS

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W989D6DB / W989D2DB 512Mb Mobile LPSDR Table of Contents- 1. GENERAL DESCRIPTION

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S29GL01GS, S29GL512S, S29GL256S, S29GL128S 128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V General description The S29GL01G/512/256/12

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