WF2M16-120DAM5 (Microsemi)
2Mx16 NOR Flash MODULE
WF2M16-XXX5
PRELIMINARY*
2Mx16 NOR Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns Packaging:
• 56 lead, Hermetic Ceramic
(4 views)
WF2M16-90DAI5A (Microsemi)
2Mx16 NOR Flash MODULE
WF2M16-XXX5
PRELIMINARY*
2Mx16 NOR Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns Packaging:
• 56 lead, Hermetic Ceramic
(4 views)
WF2M16-150DAQ5A (Microsemi)
2Mx16 NOR Flash MODULE
WF2M16-XXX5
PRELIMINARY*
2Mx16 NOR Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns Packaging:
• 56 lead, Hermetic Ceramic
(4 views)
WF2M16-150DAI5 (Microsemi)
2Mx16 NOR Flash MODULE
WF2M16-XXX5
PRELIMINARY*
2Mx16 NOR Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns Packaging:
• 56 lead, Hermetic Ceramic
(4 views)
WF2M16-90DAC5 (Microsemi)
2Mx16 NOR Flash MODULE
WF2M16-XXX5
PRELIMINARY*
2Mx16 NOR Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns Packaging:
• 56 lead, Hermetic Ceramic
(4 views)
K5A3240YBC-T755 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(3 views)
K5A3240YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(3 views)
K5A3240YTC-T755 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(3 views)
K5A3340YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(3 views)
K5A3340YTC-T855 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(3 views)
K5A3X40YTC (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(3 views)
K1S321611C-I (Samsung)
2Mx16 bit Uni-Transistor Random Access Memory
Preliminary
K1S321611C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Dra
(3 views)
HY27US08121M (Hynix Semiconductor)
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M
(3 views)
HY27SS16121M (Hynix Semiconductor)
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M
(3 views)
K1S321615M (Samsung semiconductor)
2Mx16 bit Uni-Transistor Random Access Memory
K1S321615M
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
www.DataSheet4U.com
UtRAM
Revision History
Revision No. History
0.0 Initial
(3 views)
K4X51163PG-FGC7 (Samsung Electronics)
32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM
32Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
www.DataSheet4U.com
-1-
Revision 1.0 May 2008
Final K
(3 views)
K4X51163PG-FGC8 (Samsung Electronics)
32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM
32Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
www.DataSheet4U.com
-1-
Revision 1.0 May 2008
Final K
(3 views)
IS46R16320D (Integrated Silicon Solution)
16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D
NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
FEATURES
• • • • • • • • • • • • • •
(3 views)
IS46R32160D (Integrated Silicon Solution)
16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43/46R86400D IS43/46R16320D, IS43/46R32160D
NOVEMBER 2012 16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
FEATURES
• • • • • • • • • • • • • •
(3 views)
IS61WV204816ALL (ISSI)
2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61/64WV204816ALL IS61/64WV204816BLL
2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY
FEBURARY 2023
FEATURES • High-speed acces
(3 views)
