isc Silicon NPN Power Transistor DESCRIPTION ·Ex.
Seme LAB
2N4113 - Bipolar NPN Device
2N4113 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
SICK
VL180-2N41131 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Photoelectric retro-reflective sensor, Standard optics VL180-2N41131 Photoelectric se.
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VL180-2N41138 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Photoelectric retro-reflective sensor, Standard optics VL180-2N41138 Photoelectric se.
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VSE180-2N41134 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Through-beam photoelectric sensor VSE180-2N41134 Photoelectric sensors V180-2, Throug.
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VL180-2N41133 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Photoelectric retro-reflective sensor, Standard optics VL180-2N41133 Photoelectric se.
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VL180-2N41136 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Photoelectric retro-reflective sensor, Standard optics VL180-2N41136 Photoelectric se.
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VSE180-2N41132 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Through-beam photoelectric sensor VSE180-2N41132 Photoelectric sensors V180-2, Throug.
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VSE180-2N41137 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Through-beam photoelectric sensor VSE180-2N41137 Photoelectric sensors V180-2, Throug.
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VSE180-2N41139 - Photoelectric sensors
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Through-beam photoelectric sensor VSE180-2N41139 Photoelectric sensors V180-2, Throug.
INCHANGE
2N4113 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.