2N6275 Datasheet | Specifications & PDF Download

2N6275 POWER TRANSISTORS

High-Power NPN Silicon Transistors . . . designed .

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) ·Minimum Lot-to-Lot variations for robust device

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High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching

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