2N6425 Datasheet | Specifications & PDF Download

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device

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2N6425 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetica

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