Production specification Silicon Epitaxial Planar.
2SA1235A - BIPOLAR TRANSISTORS
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA1235A FEATURES * Power dissipation PCM : 0.2 W(Tamb=2.2SA1235A - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT–23 FEATURES Low Collector.2SA1235A - Plastic-Encapsulated Transistors
Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (.2SA1235A - Silicon PNP Epitaxial Type Transistor
< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ S.2SA1235A - Silicon Epitaxial Planar Transistor
Production specification Silicon Epitaxial Planar Transistor FEATURES Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,.2SA1235A - PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies haloge.