2SA1235A Datasheet | Specifications & PDF Download

2SA1235A Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar.

BIPOLAR TRANSISTORS

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA1235A FEATURES * Power dissipation PCM : 0.2 W(Tamb=2

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Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (

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PNP Silicon Plastic Encapsulated Transistor

Elektronische Bauelemente 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies haloge

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PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT–23 FEATURES  Low Collector

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Silicon PNP Epitaxial Type Transistor

< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ S

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Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,

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