2SB1570 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Vol

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Darlington 2SB1570 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series

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(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to

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