| No |
Part Number |
Description |
Manufacture |
PDF |
| 646 |
2SC1000 |
Silicon NPN Epitaxial Transistor
|
ETC
|
|
| 645 |
2SC1001 |
SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR
:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS
FEATURES . Output Power : P =l. 2W(Min.
(f=470MHz, VCC=12.6V, I»i=0.3W)
Unit in mm
09.39 MAX.
8.4 5 MAX r -j
13
Xr < ar |
Toshiba
|
|
| 644 |
2SC1002 |
Silicon NPN Power Transistors
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video out |
SavantIC
|
|
| 643 |
2SC1004 |
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1004
DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in horizontal |
SavantIC
|
|
| 642 |
2SC1008 |
TRANSISTOR NPN
˾ ¶«Ý¸
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
2SC1008
FEATURES
TRANSISTOR£¨ NPN £© TO¡ª 92
Power dissipation PCM : 0.8 W£¨ Tamb |
ETC
|
|
| 641 |
2SC1008 |
Plastic-Encapsulated Transistors
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SC1008
FEATURES Power dissipation PCM:
TRANSISTOR (NPN) TO-92
1. EMITTER
0.8
W (Tamb=25℃)
2. BAS |
TRANSYS Electronics Limited
|
|
| 640 |
2SC1008 |
NPN Plastic-Encapsulate Transistor
WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
2SC1008
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collect |
Weitron
|
|
| 639 |
2SC1008 |
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
2SC1008
0.7A , 80 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching an |
SeCoS
|
|
| 638 |
2SC1008 |
TO-92 Plastic-Encapsulate Transistors
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES z General Purpose Switching and Amplification
TO – 92
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATI |
TGS
|
|
| 637 |
2SC1009 |
FM/AM RF AMPLIFIER/ MIXER/OSCILLATOR/CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC
|
|
| 636 |
2SC1009 |
Transistors
Transistors 2SC1009
Free Datasheet http://
Free Datasheet http://
|
USHA
|
|
| 635 |
2SC1009 |
NPN Transistors
SMD Type
Transistors
NPN Transistors 2SC1009
■ Features
● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=30V
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0. |
Kexin
|
|
