2SC2922 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Typ

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LAPT 2SC2922 Application : Audio and General Purpose (Ta=25°C) 2SC2922 100max 100max 180min 30min∗ 2.0max 50typ 250typ V MHz pF 20.0min 4.0max Silic

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LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose sAbsolute maximum ratings

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