:. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWE.
INCHANGE
2SC3297 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA.
Toshiba
2SC3297 - Silicon NPN Transistor
:. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES . Good.
SavantIC
2SC3297 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3297 DESCRIPTION ·With TO-220Fa package ·Low sat.
