isc Silicon NPN Power Transistor DESCRIPTION ·Hi.
2SC3563 - Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-.C3563 - 2SC3563
INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPTION ·High Collector-Emitter Br.