2SC3974 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switc

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Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0

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