| No |
Part Number |
Description |
Manufacture |
PDF |
| 1185 |
2SC400 |
(2SCxxx) Low Level and General Purpose Amplifiers
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|
Micro Electronics
|
|
| 1184 |
2SC4001 |
NPN SILICON POWER TRANSISTOR
|
NEC
|
|
| 1183 |
2SC4001 |
Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4001
DESCRIPTION ·The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possi |
Inchange Semiconductor
|
|
| 1182 |
2SC4002 |
High-Voltage Driver Applications
Ordering number:EN2960
NPN Triple Diffused Planar Silicon Transistor
2SC4002
High-Voltage Driver Applications
Features
· High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linear |
Sanyo Semicon Device
|
|
| 1181 |
2SC4002 |
NPN Triple Diffused Planar Silicon Transistor
2SC4002
Ordering number : ENN2960A
2SC4002
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Exc |
ON Semiconductor
|
|
| 1180 |
2SC4002 |
NPN Silicon Triple Diffused Planar Transistor
ST 2SC4002
NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E, according to its DC current gain.
On special reque |
SEMTECH
|
|
| 1179 |
2SC4002 |
NPN Silicon Triple Diffused Planar Transistor
2SC4002 NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E, according to its DC current gain.
On special request, |
Bluecolour
|
|
| 1178 |
2SC4003 |
NPN Epitaxial Planar Silicon Transistor
NPN Epitaxial Planar Silicon Transistor
FEATURES
High hFE hFE=60 to 200. Low VCE(sat)=0.6V.
Pb
Lead-free
Production specification
2SC4003
TO-251
TO-252
MAXIMUM RATING operating temperatu |
GME
|
|
| 1177 |
2SC4003 |
NPN Triple Diffused Planar Silicon Transistor
Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Exc |
Sanyo Semicon Device
|
|
| 1176 |
2SC4003 |
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4003
DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor
|
|
| 1175 |
2SC4003 |
Silicon NPN transistor
2SC4003
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.
特征 / Features 高击穿电压，极好 |
BLUE ROCKET ELECTRONICS
|
|
| 1174 |
2SC4003 |
Plastic-Encapsulated Transistors
Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
2SC4003
TRANSISTOR (NPN)
TO-251
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. BASE 2. COLLECTO |
TRANSYS
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