2SD1480 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Vo

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Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2

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