2SD1606 Datasheet | Specifications & PDF Download

2SD1606 Silicon NPN Transistor

2SD1606 Silicon NPN Triple Diffused Application L.

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000

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2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6

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