2SD2494 Datasheet | Specifications & PDF Download

2SD2494 NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCR.

Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 500

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Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=

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SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PML package www.datasheet4u.com ·Complem

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