isc Silicon NPN Darlington Power Transistor DESCR.
INCHANGE
2SD2561 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 500.
Sanken electric
2SD2561 - Silicon NPN Transistor
Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=.