2SD259 Datasheet | Specifications & PDF Download

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2 (Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robu

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2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Dam

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Transistor 2SD2598 0.15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1

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