2SD718 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complem

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NPN R Silicon NPN Triple Diffused Transistor 2SD718 SERIES  ：VCEO=110V (min) VCEO=180V (min)  2SB688  45-50W  （RoHS） APPLICATIONS  Po

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NPN R Silicon NPN Triple Diffused Transistor 2SD718 SERIES  ：VCEO=110V (min) VCEO=180V (min)  2SB688  45-50W  （RoHS） APPLICATIONS  Po

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NPN R Silicon NPN Triple Diffused Transistor 2SD718 SERIES  ：VCEO=110V (min) VCEO=180V (min)  2SB688  45-50W  （RoHS） APPLICATIONS  Po

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UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEATURES * Recommended for 45~50W Audi

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NPN R Silicon NPN Triple Diffused Transistor 2SD718 SERIES  ：VCEO=110V (min) VCEO=180V (min)  2SB688  45-50W  （RoHS） APPLICATIONS  Po

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: 2SD718 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SB688. . Recommended for 45— 50

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2

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