TOSHIBA Field Effect Transistor Silicon N Channel .
K118 - 2SK118
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications .2SK118 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications .2SK1180 - MOSFET
2SK1180 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 10 ± 40 (Tch 150ºC) (Ta = 25ºC) External dimension.2SK1181 - MOSFET
2SK1181 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 13 ± 52 (Tch 150ºC) (Ta = 25ºC) External dimensi.2SK1183 - MOSFET
2SK1183 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 200 ± 20 ±3 ± 12 (Tch 150ºC) (Ta = 25ºC) External dimension.2SK1184 - MOSFET
2SK1184 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 200 ± 20 ±5 ± 20 (Tch 150ºC) (Ta = 25ºC) External dimensions .2SK1185 - MOSFET
2SK1185 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 100 ± 20 ±5 ± 20 (Tch 150ºC) (Ta = 25ºC) External dimensions .2SK1186 - MOSFET
2SK1186 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 100 ± 20 ±9 ± 36 (Tch 150ºC) (Ta = 25ºC) External dimensions .2SK1187 - MOSFET
2SK1187 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 100 ± 20 ± 12 ± 48 (Tch 150ºC) (Ta = 25ºC) External dimension.2SK1188 - MOSFET
2SK1188 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 10 ± 40 (Tch 150ºC) (Ta = 25ºC) External dimensions.2SK1189 - MOSFET
2SK1189 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 15 ± 60 (Tch 150ºC) (Ta = 25ºC) External dimensions.K1181 - 2SK1181
2SK1181 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 13 ± 52 (Tch 150ºC) (Ta = 25ºC) External dimensi.2SK1180 - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·.