2SK1516 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for

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2SK1515, 2SK1516 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1515, 2SK1516 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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To all our customers www.DataSheet4U.com Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas

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