2SK1606 Datasheet | Specifications & PDF Download

2SK1606 Field Effect Transistors

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Sili.

isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

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