Silicon Junction FETs (Small Signal) 2SK0198 (2SK.
INCHANGE
2SK1982-01M - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK1982-01M DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Spee.
VBsemi
2SK1985-01MR - Power MOSFET
2SK1985-01MR-VB 2SK1985-01MR-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur.
Fuji Electric
2SK1983-01 - N-channel MOS-FET
2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
Fuji Electric
2SK1984-01MR - N-channel MOS-FET
2SK1984-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
Inchange Semiconductor
2SK1982 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lo.
INCHANGE
2SK1981 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.
Fuji Electric
2SK1981-01 - N-channel MOS-FET
2SK1981-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
Fuji Electric
2SK1986-01 - N-channel MOS-FET
2SK1986-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
Inchange Semiconductor
2SK1985-01M - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1985-01M DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Sourc.
Inchange Semiconductor
2SK1984-01M - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1984-01M DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Sourc.
Inchange Semiconductor
2SK1983-01 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1983-01 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source.
Inchange Semiconductor
2SK1981-01 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Swit.
Panasonic Semiconductor
2SK198 - Silicon N-Channel MOSFET
Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.
INCHANGE
2SK1984 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot.
INCHANGE
2SK1983 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.
INCHANGE
2SK1985 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot.
