2SK198 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Swit

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot

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2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1983-01 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source

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2SK1985-01MR-VB 2SK1985-01MR-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur

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2SK1981-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK1984-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1985-01M DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Sourc

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isc N-Channel MOSFET Transistor 2SK1982-01M DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Spee

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2SK1986-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1984-01M DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Sourc

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot

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Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

(5 views)