2SK1983 Datasheet | Specifications & PDF Download

2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1983-01 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source

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