2SK2019-01 FAP-IIA Series > Features High Speed Sw.
Fuji Electric
2SK2019-01 - N-channel MOS-FET
2SK2019-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
Inchange Semiconductor
2SK2019-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum .
